Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

作     者：HE XuLin,ZHANG JingQuan,FENG LiangHuan,WU LiLi,LI Wei,ZENG GuangGen,LEI Zhi,LI Bing & ZHENG JiaGui College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China 

作者机构：College of Materials Science and Engineering Sichuan University 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2010年第53卷第9期

页      面：2337-2341页

核心收录：

学科分类：0810[工学-信息与通信工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Hi-Tech Research and Development Program of China ("863" Project) (Grant No. 2003AA513010) 

主　　题：CdTe solar cells admittance spectroscopy deep-level defect 

摘      要：CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy *** positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell *** results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.