Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells
Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells作者机构:College of Materials Science and Engineering Sichuan University
出 版 物:《Science China(Technological Sciences)》 (中国科学(技术科学英文版))
年 卷 期:2010年第53卷第9期
页 面:2337-2341页
核心收录:
学科分类:0810[工学-信息与通信工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 0812[工学-计算机科学与技术(可授工学、理学学位)]
主 题:CdTe solar cells admittance spectroscopy deep-level defect
摘 要:CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy *** positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell *** results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively.