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退火对cdte薄膜性质影响

西安文理学院学报（自然科学版） 2024年第1期27卷 83-87页

作者：常璐王朋伟刘竞艳苗壮田弋纬西安汉唐分析检测有限公司西安710016

使用近间隔升华法制备碲化镉(cdte)多晶薄膜,然后在不同的条件下进行退火处理.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、X射线光电子能谱(XPS)和俄歇电子能谱(AES)对样品进行测试.结果表明刚沉积的cdte薄膜呈立方相,并沿晶向高度择... 详细信息

使用近间隔升华法制备碲化镉(cdte)多晶薄膜,然后在不同的条件下进行退火处理.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、X射线光电子能谱(XPS)和俄歇电子能谱(AES)对样品进行测试.结果表明刚沉积的cdte薄膜呈立方相,并沿晶向高度择优取向;退火后晶粒明显长大,且晶界减少.退火处理可以降低电流载流子的复合概率,有效地提高太阳电池的并联电阻和减少漏极电流.通过对X射线光电子能谱的详细分析发现,碲氧化物的存在及其含量随着深度的增加而减少,并且可能存在TeCl_(2)O.

关键词： cdte 退火处理 XRD XPS AES

巯基功能化离子液体作稳定剂合成的cdte纳米晶对Co^(2+)和Mn^(2+)响应的选择性

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化工管理 2024年第8期 150-153页

作者：张婷郑州黄河护理职业学院河南郑州450000

使用荧光半导体来探测高毒性及人体内富集的重金属离子,这种方法已经引起了研究者们的兴趣。采用巯基功能化的离子液体作稳定剂来合成不同的cdte纳米晶,具有良好的理化性质。文章通过研究pH值对cdte纳米晶荧光性质的影响,来进一步探讨C... 详细信息

使用荧光半导体来探测高毒性及人体内富集的重金属离子,这种方法已经引起了研究者们的兴趣。采用巯基功能化的离子液体作稳定剂来合成不同的cdte纳米晶,具有良好的理化性质。文章通过研究pH值对cdte纳米晶荧光性质的影响,来进一步探讨cdte纳米晶对Co^(2+)和Mn^(2+)的响应性,并明确了cdte纳米晶对Co^(2+)和Mn^(2+)的检测极限及检测范围。

关键词： cdte 纳米晶检测离子液体选择性

Grain boundaries induce significant decrease in lattice thermal conductivity of cdte

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能源与人工智能(英文)

能源与人工智能(英文) 2023年第1期11卷 43-50页

作者： Xiaona Huang Kun Luo Yidi Shen Yanan Yue Qi An School of Power and Mechanical Engineering Wuhan UniversityWuhanHubei 430072China Department of Chemical and Materials Engineering University of Nevada–RenoRenoNevada 89557United States Department of Materials Science and Engineering Iowa State UniversityAmesIA 50011United States

Semiconductors are promising in photoelectric and thermoelectric devices, for which the thermal transport properties are of particular interest. However, they have not been fully understood, especially when crystalline imperfections are present. Here, using cadmium telluride (cdte) as an example, we illustrate how grain boundaries (GBs) affect the thermal transport properties of semiconductors. We develop a machine-learning force field from density functional theory calculations for predicting the lattice thermal conductivity (LTC) via equilibrium molecular dynamics simulations. The LTC of crystalline cdte decreases with the relationship of κL~1/T in the simulation temperature range of 300 – 900 K, in which the isotropic LTC decreases from 3.34 to 0.23 W/ (m⋅K) due to the enhanced anharmonicity. More important, after introducing GBs, the LTC is suppressed in all directions, especially in the direction normal to the GB planes. More severe LTC suppression occurs in cdte with Σ9 GB than that with Σ3 GB at 300 K, decreasing by 92.8% and 61.4% along the direction normal to the GB planes compared to the isotropic LTC of the crystalline cdte, respectively. The decreased LTC is consistent with the weaker bonding near GB planes and lower shear modulus of the defective material. The analyses of the phonon dispersion curves, vibrational density of states, and phonon participation ratio indicate that the decreased LTC mainly arises from phonon scattering at GBs. Overall, our work highlights that GBs can greatly influence the LTC of semiconductors, thus providing a promising approach for thermal property design.

关键词： Lattice thermal conductivity Machine-learning force field Molecular dynamics cdte Grain boundary

Physical properties of spray deposited cdte thin films:PEC performance

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Journal of Semiconductors 2011年第3期32卷 10-16页

作者： V.M.Nikale S.S.Shinde C.H.Bhosale K.Y.Rajpure Electrochemical Materials Laboratory Department of PhysicsShivaji University

p-cdte thin films were prepared by spray pyrolysis under different ambient conditions and characterized using photoelectrochemical（PEC）,X-ray diffraction（XRD）,scanning electron microscopy,energy-dispersive analysis by X-ray（EDAX）,and optical transmission studies.The different preparative parameters viz solution pH, solution quantity,substrate temperature and solution concentration have been optimized by the PEC technique in order to get good-quality photosensitive material.XRD analysis shows the polycrystalline nature of the film,having cubic structure with strong（111） orientation.Micrographs reveal that grains are uniformly distributed over the surface of the substrate indicating the well-defined growth of polycrystalline cdte thin film.The EDAX study for the sample deposited at optimized preparative parameters shows the nearly stoichiometric Cd：Te ratio.Optical absorption shows the presence of direct transition with band gap energy of 1.5 eV.Deposited films exhibit the highest photocurrent of 2.3 mA,a photovoltage of 462 mV,a 0.48 fill factor and 3.4%efficiency for the optimized preparative parameters.

关键词： cdte PEC temperature concentration structure morphology composition optical

Properties of cdte nanocrystalline thin films grown on different substrates by low temperature sputtering

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Journal of Semiconductors 2009年第5期30卷 18-21页

作者：陈惠敏郭福强张保花 Department of Physics Changji College College of Physical Science and Technology Xinjiang University

cdte nanocrystalline thin films have been prepared on glass, Si and Al2O3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were charac-terized by X-ray diffraction （XRD） and field-emission scanning electron microscopy （FESEM）. The XRD examinations revealed that cdte films on glass and Si had a better crystal quality and higher preferential orientation along the （111） plane than the Al2O3. FESEM observations revealed a continuous and dense morphology of cdte films on glass and Si substrates. Optical properties of nanocrystalline cdte films deposited on glass substrates for different deposited times were studied.

关键词： cdte thin films RF magnetron sputtering crystal structure X-ray diffraction optical properties

Fast response CdS-CdSxTe(1-x)-cdte core-shell nanobelt photodetector

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Science Bulletin 2018年第17期63卷 1118-1124页

作者： Mingwei Tang Pengfei Xu Zhong Wen Xing Chen Chenlei Pang Xuechu Xu Chao Meng Xiaowei Liu He Tian Nagarajan Raghavan Qing Yang Sate Key Laboratory of Modern Optical Instrumentation College of Optical Science and Engineering Zhejiang University Hangzhou 310027 China The Fifth Research Institute of Ministry of Industry and Information Technology (MIIT) Cuangzhou 510610 China Center of Electron Microscopy. Zhejiang University Hangzhou 310027 China Engiaeering Product Development (EPD) Pillar Singapore University of Technology and Design Singapore 487372. Singapore Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China

Quasi-one-dimensional semiconductor nanostructure-based photodetectors show high sensitivity but suffer from slow response speed due to surface reaction. Here, we report a fast-response CdSCdS_xTe(1-x)-Cd Te core-shell nanobelt photodetector with a rise time of 11μs, which is the fastest among Cd S based photodetectors reported previously. The improved response speed is ascribed to the suppressed possibilities of surface reaction resulting from the core-shell structure and heterojunction among the CdS, CdS_xTe(1-x)and cdte. The measured response spectrum of CdS-CdS_xTe(1-x)-cdte core-shell nanobelt photodetector covers a wide range from 355 to 785 nm. Moreover, high responsivity(1,520 A/W)and large 3 dB bandwidth(~22.9 kHz) are obtained along with the fast response. The high performance in responsivity, sensitivity, spectral response and photoresponse speed makes this device a promising candidate for practical application in optical sensing, communication and imaging.

关键词：光电探测器快反应反应速度表面反应上升时间 cdte nano CdS

Electronic properties and deep level transient spectroscopy of CdS/cdte thin film solar cells

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Chinese Physics B 2011年第3期20卷 378-381页

作者：黎兵冯良桓王钊郑旭郑家贵蔡亚平张静全李卫武莉莉雷智曾广根 College of Materials Science and Engineering Sichuan University

It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the cdte polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/cdte solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.

关键词： cdte electrical properties deep level transient spectroscopy

Sacrifice-Template Synthesis of cdte Nanorod Arrays in Glycol via a Solvothermal Process

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Chinese Physics Letters 2012年第8期29卷 198-201页

作者：邓元刘晶王瑶梁立兴 Beijing Key Laboratory of Special Functional Materials and Film School of Materials Science and EngineeringBeihang UniversityBeijing 100191

cdte nanorod arrays were prepared by using a simple solvothermal process using Te nanorod arrays as the sacrifice template.The cdte nanorods are orientation stacked by lots of cdte nanoparticles.The photoluminescence properties of these arrays include excellent fluorescence.The concentration of KOH plays a key role in the formation of cdte nanorod arrays.The possible formation mechanism of cdte nanorod arrays is proposed.

关键词： cdte arrays template

Influence of the layer parameters on the performance of the cdte solar cells

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Optoelectronics Letters 2018年第2期14卷 98-103页

作者： Assiya Haddout Abderrahim Raidou Mounir Fahoume Laboratory of1Condensed Matter Physics Department of Physics Faculty of Science Ibn Tofail University

Influence of the layer parameters on the performances of the cdte solar cells is analyzed by SCAPS-1 D. The Zn O: Al film shows a high efficiency than SnO_2:F. Moreover, the thinner window layer and lower defect density of Cd S films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer cdte and high metal work function. For the low cost of cell production, ultrathin film cdte cells are used with a back surface field(BSF) between cdte and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick cdte, 0.1-μm-thick PbTe and 30-nm-thick CdS.

关键词： cdte 太阳能电池性能水流密度 PbTe 变换效率电影低费用