Soft magnetic properties of (Ni_(50)Fe_(50)) SiO_2 granular thin films for high frequency application

作     者：YANG Xiaolin GE Shihui RUAN Chengli YANG Xiaolin1), GE Shihui2), and RUAN Chengli1)1) College of Physics and Electronic Science, University of Electronic Science and Technology of China, Chengdu 610054, China2) Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China

作者机构：College of Physics and Electronic Science University of Electronic Science and Technology of China Chengdu 610054 China Key Laboratory for Magnetism and Magnetic Materials of Ministry of EducationLanzhou University Lanzhou 730000 China College of Physics and Electronic Science University of Electronic Science and Technology of China Chengdu 610054 China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2006年第25卷第Z1期

页      面：650-654页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：thin films nanostructure magnetic properties 

摘      要：A series of (Ni50Fe50)x(SiO2)(1-x) films with different volume fraction x was fabricated by magnetron co-sputtering technique. The microstructure, magnetic and electrical properties were investigated systematically by using X-ray diffraction, transmission electronic microscope, vibrating sample magnetometer and the traditional four point measurement method of resistivity. The results show that the samples consist of nano-scaled Ni50Fe50 metallic particles with fcc structure uniformly embedded in amorphous insulating SiO2 matrix, and the particle size decreases with the decrease of x. The rapid change of coercivity with x is observed, and a minimum value 160 A·m-1 of Hc was obtained for the sample of x=0.83 with film thickness of 180 nm, which can be contributed to the exchange coupling between nano-scaled Ni50Fe50 particles. At the frequency lower than 1 GHz, the real part μ′ of complex permeability keeps about 110 and the image part μ″ is less than 15. Besides, this film exhibits high resistivity ρ=263 μΩ·cm, high saturation magnetization 4πMs=1.25 T, high in-plane magnetic anisotropy field Hk=6.37 kA·m-1, and the ferromagnetic resonance (FMR) frequency is estimated to be 2.8 GHz. Therefore, this film can be used in high frequency devices operating over 2 GHz.