The residual C concentration control for low temperature growth p-type GaN

作     者：刘双韬 赵德刚 杨静 江德生 梁锋 陈平 朱建军 刘宗顺 李翔 刘炜 邢瑶 张立群 Shuang-Tao Liu;De-Gang Zhao;Jing Yang;De-Sheng Jiang;Feng Liang;Ping Chen;Jian-Jun Zhu;Zong-Shun Liu;Xiang Li;Wei Liu;Yao Xing;Li-Qun Zhang;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第10期

页      面：411-416页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401801 and 2016YFB0400803) the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089) the Science Challenge Project(Grant No.JCKY2016212A503) Beijing Municipal Science and Technology Project(Grant No.Z161100002116037) 

主　　题：nitride materials p-GaN C concentration 

摘      要：In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration： （i） the C concentration decreases with the increase of growth pressure; （ii） we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; （iii） annealing outside of metal-organic chemical vapor deposition （MOCVD） could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.