Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect

作     者：Gourab Dutta Sukla Basu 

作者机构：Indian Institute of Technology Kharagpur ECE DepartmentKalyani Government Engineering College 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第5期

页      面：38-43页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：GaInP/GaAs HBT current gain transit time recombination current surface recombination ideality factor 

摘      要：An analytical model is used to predict the effects of surface recombination current on the gain and transit time of GalnP/GaAs heterojunction bipolar transistors（HBTs）.The present analysis shows that consideration of the recombination current gives current gain values that are comparable to those of the experimental *** dependence of current gain on temperature,base doping and emitter area are also analyzed,and the variation in collector current with emitter-base voltage,temperature and doping is considered.