Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

作     者：Sohail Ahmed Jiabao Yi 

作者机构：School of Materials Science and EngineeringUNSWKensingtonSydney 2052Australia 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2017年第9卷第4期

页      面：152-174页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：funded by Australian Research Council discovery project DP140103041 Future Fellowship FT160100205 

主　　题：2D materials TMDC layers Charge carrier mobility Field-effect transistor Heterostructure Charge carrier scattering 

摘      要：Two-dimensional(2D) materials have attracted extensive interest due to their excellent electrical, thermal,mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide(TMDC), another kind of 2D material,has a nonzero direct band gap(same charge carrier momentum in valence and conduction band) at monolayer state,promising for the efficient switching devices(e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2DTMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.