Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

作     者：孙姚耀 吕粤希 韩玺 郭春妍 蒋志 郝宏玥 蒋洞微 王国伟 徐应强 牛智川 Yao-yao Sun;Yue-xi Lv;Xi Han;Chun-yan Guo;Zhi Jiang;Hong-yue Hao;Dong-wei Jiang;Guo-wei Wang;Ying-qiang Xu;Zhi-chuan Niu;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China

作者机构：State Key Laboratory for Supedattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第9期

页      面：526-529页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2016YFB0402403 and 2013CB932904) the National Natural Science Foundation of China(Grant Nos.61290303 and 61306013) China Postdoctoral Science Foundation(Grant No.2016M601100) 

主　　题：short /mid wavelength InGaAsSb InAs/GaSb 

摘      要：In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,*** 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/*** mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/***,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.