A Study of Electron Beam Induced Deposition and Nano Device Fabrication Using Liquid Cell TEM Technology

作     者：Xin Chen Lihui Zhou Ping Wang Hongliang Cao Xiaoli Miao Feifei Wei 

作者机构：Key Laboratory for Ultrafine Materials of Ministry of Educationand Shanghai Key Laboratory of Advanced Polymeric MaterialsSchool of Materials Science and EngineeringEast China University of Science and TechnologyShanghai 200237China Department of Materials Science and EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaIL 61801USA State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China East China University of Science and TechnologyShanghai 200237China State Key Laboratory of Bioreactor EngineeringBiomedical Nanotechnology CenterEast China University of Science and TechnologyShanghai 200237China 

出 版 物：《Chinese Journal of Chemistry》 (中国化学（英文版）)

年 卷 期：2014年第32卷第5期

页      面：399-404页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 

基　　金：The experiments have been carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities,University of Illinois,which are partially supported by the U.S.Department of Energy under grants DE-FG02-07ER46453 and DE-FG02-07ER46471 The authors thank S.J.Dillon,Y.Liu,J.Mabon,K.-W.Noh,A.Shah,T.Shang,J.G.Wen,J.M.Zuo for the kind help.The project was supported by Shanghai Leading Academic Discipline Project(B502) Shanghai Key Laboratory Project(08DZ2230500) Fundamental Research Fund of ECUST,Science and Technology Commission of Shanghai Municipality Project(11nm0507000) the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry 

主　　题：electron beam induced deposition in situ TEM nanolithography nanodevices 

摘      要：SiCx nano dots and nano wires with sizes from 60 nm to approximately 2μm were fabricated using liquid cell transmission electron microscope(TEM)technology.A SiCl_(4)in CH_(2)Cl_(2)solution was sealed between two pieces of Si_(3)N_(4)window grids in an in situ TEM liquid *** 200 keV electron beams were used to bombard the sealed precursors,which caused decomposition of the precursor materials,and deposition of the nano materials on the Si_(3)N_(4)window *** size of nano dots increased with beam exposure time,following an approximately exponential relationship with the beam *** electrons are attributed as the primary sources for the Si and C reduction.A nano device was formed from a deposited nano wire,with its electrical property characterized.