Solid state reaction for the formation of spinel MgFe_2O_4 across perovskite oxide interface

作     者：Iftikhar Ahmed Malik XiaoXing Ke Xin Liu ChuanShou Wang XueYun Wang Rizwan Ullah ChuangYe Song Jing Wang JinXing Zhang 

作者机构：Department of Physics Beijing Normal University Institute of Microstructure and Property of Advanced Materials Beijing University of Technology Department of Physics University of Science and Technology Beijing 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2017年第60卷第9期

页      面：80-84页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51332001,11604011,and 11404016) the National Basic Research Program of China(Grant No.2014CB920902) Open Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications)(Grand No.2016B002) 

主　　题：固相反应 界面形成 钙钛矿型氧化物 MgFe2O4 尖晶石 脉冲激光沉积 高温超导体 控制界面 

摘      要：Solid state reaction is a conventional method to synthesize structurally stable inorganic solids by mixing powdered reactants together at high pressure （over 1 x 105 mbar （1 mbar = 100 Pa）） and high temperature （over 1300 K） [1-4]. This method is effective and sophisticated to prepare solid mate- rials, especially the functional complex oxides such as high temperature superconductors, piezoelectrics, dielectrics, etc. However, the chemical reactions cannot be intrinsically con- trolled and integrated at an atomic level in order to achieve the applications of future thin film devices with reduced dimensions [5]. With the desire of designing high-quality products with the micro/nanoscale integration, many pow- erful physical techniques, such as, pulsed-laser deposition （PLD）, molecular beam epitaxy （MBE）, sputtering deposi- tion, etc., have experienced enormous development due to their ability of lattice and/or interfacial controls. Using these growth techniques, layer-by-layer deposition （multilayer and/or superlattice） can be achieved, providing us a platform to tune the crystal structures at an atomic level by controlling the interfacial terminations and epitaxial strain, which are absent in their bulk counterparts [6-8]. From this point of view, well-controlled interfacial structures may also provide the solid state reaction at an atomic level during the physical depositions, which provides us an effective way to design the desired products from the chemical bonding reconstruction.