Investigation on Luminescent Properties of Eu-doped GaN Polycrystalline Prepared by Solid-state Reaction

作     者：WANG Xiaodan MO Yajuan SHI Jianping ZENG Xionghui WANG Jianfeng XU Ke 

作者机构：Department of PhysicsSuzhou University of Science and Technology Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of Sciences Suzhou Nanowin Science and Technology Co.Ltd. 

出 版 物：《Journal of the Chinese Ceramic Society》 (硅酸盐学报（英文版）)

年 卷 期：2016年第3卷第2期

页      面：84-90页

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：partly supported by the National Natural Science Foundation of China(NSFC)(61306004,51002179,11247023,51272270) the Natural Science Foundation of Jiangsu Province of China(BK20130263) the Functional Development Program of the Chinese Academy of Sciences(yg2012093) Collaborative Innovation Center of Suzhou Nano Science and Technology the PAPD and USTS Cooperative Innovation Center Postgraduate innovation and educational reform project of Suzhou University of Science and Technology(091420058) 

主　　题：gallium nitride europium luminescence 

摘      要：Eu-doped GaN was prepared by solid-state reaction with Ga_2O_3,Eu_2O_3 and NH_3 applied as raw *** structural and optical properties were *** to XRD results,wurtzite-type GaN powder without Eu_2O_3phase was obtained at 1000℃ and the grain size was about 20 *** to the undoped GaN powder,all the Raman peaks of Eu-doped GaN powder were shifted towards lower phonon frequency about 2-6 cm^(-1),which may be resulted from the strain caused by the Eu^(3+) *** cathodo-luminescence(CL) spectra were measured from 80 to 293 *** luminescence and Eu^(3+) luminescence were both observed when the temperature was below 200 *** the temperature was increased to 293 K,the ultraviolet luminescence ***,the intensity of Eu^(3+) luminescence was nearly not influenced by temperature.A donor-acceptor pair(DAP) model based on O_N and Mg_(Ga) was pointed out for explaining the luminescence *** cathodo-luminescence spectra of nominal 1.0%,2.0%,3.0%and 5.0%(mole fraction) Eu-doped GaN at room temperature were summarized,which suggestes the 2.0%Eu-doped GaN has the highest Eu luminescent intensity.