咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Insight into multiple-triggeri... 收藏

Insight into multiple-triggering effect in DTSCRs for ESD protection

Insight into multiple-triggering effect in DTSCRs for ESD protection

作     者:Lizhong Zhang Yuan Wang Yize Wang Yandong He 

作者机构:Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking UniversityBeijing 100871 China 

出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期:2017年第38卷第7期

页      面:93-96页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基  金:supported by the Beijing Natural Science Foundation China(No.4162030) 

主  题:electrostatic discharge(ESD) diode triggered silicon controlled rectifier(DTSCR) double snapback transmission line pulse(TLP) test 

摘      要:The diode-triggered silicon-controlled rectifier(DTSCR) is widely used for electrostatic discharge(ESD) protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigger/holding voltage, low parasitic capacitance. However, the multiple-triggering effect in the typical DTSCR device may cause undesirable larger overall trigger voltage, which results in a reduced ESD safe margin. In previous research, the major cause is attributed to the higher current level required in the intrinsic SCR. The related discussions indicate that it seems to result from the current division rule between the intrinsic and parasitic SCR formed in the triggering process. In this letter, inserting a large space into the trigger diodes is proposed to get a deeper insight into this issue. The triggering current is observed to be regularly reduced along with the increased space, which confirms that the current division is determined by the parasitic resistance distributed between the intrinsic and parasitic SCR paths. The theoretical analysis is well confirmed by device simulation and transmission line pulse(TLP) test results. The reduced overall trigger voltage is achieved in the modified DTSCR structures due to the comprehensive result of the parasitic resistance vs triggering current, which indicates a minimized multipletriggering effect.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分