Effects of electron radiation on commercial power MOSFET with buck converter application

作     者：Sheik Fareed Ookar Abubakkar Nor Farahidah Zabah Yusof Abdullah Dhiyauddin Ahmad Fauzi Norasmahan Muridan Nurul Fadzlin Hasbullah 

作者机构：Department of Electrical and Computer EngineeringInternational Islamic University Kuala Lumpur 53100Malaysia Industrial Technology Division Agency Nuclear MalaysiaKuala Lumpur 43000 Malaysia 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2017年第28卷第3期

页      面：30-34页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0827[工学-核科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：funded by International Islamic University Malaysia(No.EDW B14-159-1044) 

主　　题：VDMOSFET I–V characteristics Drain current Buck converter Electron radiation 

摘      要：Microelectronic power converters such as buck and boost converter are required to be tolerant to radiations including electron radiation. This paper examines electron radiation effects on the Ⅰ-Ⅴ characteristics of VDMOSFET and its corresponding effects in buck converter. Analysis of the electrical characteristics shows that after irradiation the threshold voltage and drain current for all VDMOSFETs degraded more than two orders of magnitude. The impact of this electrical degradation has been investigated in an application of typical buck converter circuit. The buck converter with n-channel switching transistor shows that after irradiation its output voltage increased with the drain current in the n-channel ZVN4424 A VDMOSFET, while the buck converter with p-channel switching transistor shows its output voltage decreased with the drain current in the p-channel ZVP4424 A VDMOSFET after irradiation.