Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates (Eu/Ba)8Ga16Sn30 Prepared by Ga Flux Method
Electrical Transport Properties of Type-Ⅷ Sn-Based Single-Crystalline Clathrates(Eu/Ba)_8Ga_(16)Sn_(30) Prepared by Ga Flux Method作者机构:Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology(Ministry of Education)Yunnan Normal UniversityKunming 650500 Photoelectric Engineering CollegeYunnan Open UniversityKunming 650500
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2017年第34卷第4期
页 面:92-96页
核心收录:
学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:Supported by the National Natural Science Foundation of China under Grant No 51262032
主 题:Seebeck Eu/Ba Electrical Transport Properties of Type Prepared by Ga Flux Method Sn-Based Single-Crystalline Clathrates Ba Ga
摘 要:Single-crystalline samples of Eu/Ba-filled Sn-based type-Ⅷ clathrate are prepared by the Ga flux method with different stoichiometric ratios. The electrical transport properties of the samples are optimized by Eu doping. Results indicate that Eu atoms tend to replace Ba atoms. With the increase of the Eu initial content, the carrier density increases and the carrier mobility decreases, which leads to an increase of the Seebeck coefficient. By contrast, the electrical conductivity decreases. Finally, the sample with Eu initial content of x = 0.75 behaves with excellent electrical properties, which shows a maximal power factor of 1.51 mW·m^-1K^-2 at 480K, and the highest ZT achieved is 0.87 near the temperature of 483K.