Significant enhancement of UV emission in ZnO nanorods subject to Ga＋ ion beam irradiation

作     者：Boluo Yadian Rui Chen Hai Liu Handong Sun Qing Liu Chee Lip Gan Zhou Kun Chunwang Zhao Bin Zhu Yizhong Huang 

作者机构：School of Materials Science and Engineering Nanyang Technological University SO Nanyang Avenue 639798 Singapore Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link 637371 Singapore School of Mechanical and Aerospace Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore College of Art and Sciences Shanghai Maritime University Shanghai 201306 China Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials Faculty of Physics and Electronic Science Hubei University Wuhan Hubei 430062 China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2015年第8卷第6期

页      面：1857-1864页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 09[农学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0901[农学-作物学] 

基　　金：This research was support by SUG (Start-up funding in NTU)  Tier i (AcRF grant MOE Singapore M401992)  Tier 2 (AcRF grant MOE Singapore M4020159) and the Chinese Natural Science Foundation (Grant 51271031  60906053  62174118 and 51308050309) 

主　　题：ZnO nanorods photoluminescenceenhancement UV emission Ga+ ion beam 

摘      要：Applications of ZnO nanomaterials in optoelectronics are still limited due to their insufficient photoluminescence efficiency. In order to optimize the photoluminescence properties of ZnO nanorods, the UV emission of vertically aligned ZnO nanorods grown on a Si substrate, in correlation with Ga＋ ion irradiation at different ion energies （0.5 keV-16 keV）, was investigated in the present study. We found that the UV intensity increased rapidly with increasing Ga＋ ion energy, up to its maximum around 2 keV, at which point the intensity was approximately 50 times higher than that produced by as-grown ZnO nanorods. The gentle bombardment of low-energy Ga＋ ions removes defects from ZnO nanorod surfaces. The Ga＋ ions, on the other hand, implant into the nanorods, resulting in compressive strain. It is believed that the perfect arrangement of the crystal lattice upon removal of surface defects and the introduction of compressive strain are two factors that contribute to the significant enhancement of UV light generation.