Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

作     者：Alireza Kargar 

作者机构：Department of Electrical and Computer Engineering Shiraz University Shiraz *** Iran 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2009年第26卷第6期

页      面：73-76页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 080202[工学-机械电子工程] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0802[工学-机械工程] 0704[理学-天文学] 

主　　题：gamma-ray bursts gamma-rays relativity 

摘      要：A silicon nanowire （Si-NW） sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.