Characterization of CuInS_2 thin films prepared by sulfurization of Cu-In precursor

作     者：阎有花 刘迎春 方玲 朱景森 赵海花 李德仁 卢志超 周少雄 

作者机构：China Iron & Steel Research Institute GroupAdvanced Technology & Materials Co.Ltd. 

出 版 物：《中国有色金属学会会刊：英文版》 (Transactions of Nonferrous Metals Society of China)

年 卷 期：2008年第18卷第5期

页      面：1083-1088页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project(2006AA03Z2370) supported by the High-Tech Research and Development Program of China 

主　　题：铜铟薄膜 前体 沉积层序 金属学 

摘      要：CuInS2 thin films were prepared by sulfurization of Cu-In *** influences of the deposition sequence of Cu and In layers,such as Cu/In,Cu/In/In,and In/Cu/In,on structure,topography,and optical properties of CuInS2 thin films were investigated.X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 *** force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence *** the deposition sequence of precursor is In/Cu/In,the CuInS2 thin films show a single-phase chalcopyrite structure with (112) preferred *** surface morphology of CIS films is uniform and *** absorption coefficient is larger than 104 cm-1 with optical band gap Eg close to 1.4 eV.