Electrical and optical property of annealed Te-doped GaSb

作     者：Jie Su Tong Liu Jingming Liu Jun Yang Guiying Shen Yongbiao Bai Zhiyuan Dong Fangfang Wang Youwen Zhao 

作者机构：Key Laboratory of Semiconductor Materials ScienceBeijing Key Laboratory of Low Dimensional Semiconductor Materialsand DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Inner Mongolia Aerospace Honggang Machinery Corporation LimitedHohhot 010020China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第4期

页      面：18-22页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61474104 61504131) 

主　　题：Te doped GaSb annealing Hall effect measurement photoluminescence spectroscopy IR optical transmission 

摘      要：GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb *** this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient *** annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） *** annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR *** acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy *** mechanism of the variation of the defect and its influence on the material properties are discussed.