A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer

作     者：Yubing Wang Weihong Yin Qin Han Xiaohong Yang Han Ye Qianqian Lü Dongdong Yin 

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第4期

页      面：103-106页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081704[工学-应用化学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：Project supported by the National Key Research and Development Program of China(No.2016YFB0402404) the High-Tech Research and Development Program of China(Nos.2013AA031401,2015AA016902,2015AA016904) the National Natural Foundation of China(Nos.61674136,61176053,61274069,61435002) 

主　　题：graphene field effect transistor flake 

摘      要：Graphene field-effect transistors have been intensively ***,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need to transfer the exfoliated graphene samples to a target *** to the small area of exfoliated graphene and its random distribution,the transfer method requires rather high *** this paper,we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of *** characterize the doping level of this method,we transfer graphene flakes to pre-patterned metal electrodes,forming graphene field-effect *** hole doping of graphene is calculated to be 2.16×10^12cm^-*** addition,we fabricate a waveguide-integrated multilayer graphene photodetector to demonstrate the viability and accuracy of this method.A photocurrent as high as 0.4 μA is obtained,corresponding to a photoresponsivity of 0.48 mA/*** device performs uniformly in nine illumination cycles.