High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells
High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells作者机构：Research Center for New Energy Technology Shanghai Institute of Microsystem and Information Technology (SIMIT) Shanghai 200050 China Xi'an Longi Silicon Materials Corp. Xi'an 710100 China
出 版 物：《Frontiers in Energy》 (能源前沿（英文版）)
年 卷 期：2017年第11卷第1期
页 面：78-84页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：the Key Project of Zhangjiang National Innovation Demonstration Zone Special Development Fund supported by Xi’an Longi Silicon Materials Corp supported in part by the National High Technology Research and Development Program of China (863 Program) the Main Program of Knowledge Innovation of Chinese Academy of Sciences the International S&T Cooperation Program of China
主 题：n-type Cz-Si thinner wafer surface texture,high efficiency SHJ solar cell
摘 要：n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction （SHJ） solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of〉 22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope （SEM） and transmission electron microscope （TEM）. Furthermore, the dependence of SHJ solar cell open- circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 μm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 μm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.
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