Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study

作     者：李佩成 梅光辉 胡光喜 王伶俐 刘冉 汤庭鳌 

作者机构：State Key Laboratory of ASIC and SystemSchool of Information Science and TechnologyFudan University 

出 版 物：《Communications in Theoretical Physics》 (理论物理通讯（英文版）)

年 卷 期：2012年第58卷第7期

页      面：171-174页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 081304[工学-建筑技术科学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0813[工学-建筑学] 

基　　金：Supported of National Natural Science Foundation of China under Grant Nos. 61171010 and 61171011 the State Key Laboratory of ASIC and System is Appreciated under Grant No. 11MS015 the Special Funds for Major State Basic Research (973) under Grant No. 2011CBA00603 

主　　题：current-voltage characteristics double gate MOSFET unintended dopant 

摘      要：In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green s Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.