Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature

作     者：朱科 YANG Ye LI Jia SONG Weijie 

作者机构：Department of Physics and Mathematics Hunan Institute of Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2017年第32卷第1期

页      面：85-88页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Funded by National Natural Science Foundation of China(NSFC)(Nos.21205127 61275114) 

主　　题：room temperature ZnO thin films sputtering electrical properties 

摘      要：Al-doped zinc oxide（AZO） and Ga-doped zinc oxide（GZO） thin films with the same doping concentration（3.6 at%） were deposited on glass substrates at room temperature by direct current（DC） magnetron ***,we comparatively studied the doped thin films on the basis of their structural,morphological,electrical,and optical properties for optoelectronic *** thin films exhibited excellent optical properties with more than 85%transmission in the visible *** GZO thin film had better crystallinity and smoother surface morphology than the AZO thin *** conductivity of the GZO thin film was improved compared to that of the AZO thin film：the resistivity decreased from 1.01×10^-3 to 3.5×10^-4 Ω cm,which was mostly due to the increase of the carrier concentration from 6.5×10^20 to 1.46×10^21cm^-*** results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.