Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

作     者：N Yadav S Ghosh P S Malviya 

作者机构：School of Studies in Physics Vikram University Ujjain 465010 India Department of Physics Govt. J.N.S. Post Graduate College Shujalpur 465333 India 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第1期

页      面：304-309页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

主　　题：nonlinear parametric interactions ion-implanted semiconductor plasmas strain-dependent dielectric constant 

摘      要：We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants（SDDC）. High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14--10^-12m^2·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.