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Temperature dependent Raman and photoluminescence of vertical WS2/MoS2 monolayer heterostructures

Temperature dependent Raman and photoluminescence of vertical WS_2/MoS_2 monolayer heterostructures

作     者:Zhijian Hu Yanjun Bao Ziwei Li Yongji Gong Rui Feng Yingdong Xiao Xiaochun Wu Zhaohui Zhang Xing Zhu Pulickel M. Ajayan Zheyu Fang 

作者机构:State Key Laboratory for Mesoscopic PhysicsSchool of PhysicsPeking UniversityCollaborative Innovation Center of Quantum MatterBeijing 100871China Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and TechnologyBeijing 100190China Department of Materials Science and NanoEngineeringRice UniversityHouston7X 77005USA 

出 版 物:《Science Bulletin》 (科学通报(英文版))

年 卷 期:2017年第62卷第1期

页      面:16-21页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:supported by the National Basic Research Program of China (2015CB932403) the National Natural Science Foundation of China (11674012, 61422501, 11374023, 11304054 and 61521004) Beijing Natural Science Foundation (L140007) Foundation for the Author of National Excellent Doctoral Dissertation of China (201420) National Program for Support of Top-notch Young Professionals 

主  题:Temperature dependent Raman spectra Photoluminescence Transition metal dichalcogenides Heterostructures 

摘      要:Heterostructures from two-dimensional transition-metal dichalcogenides MX2 have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS2/MoS2 monolayer heterostructures. Our result shows that both E^g and Alg modes of WS2 and MoS2 vary linearly with tem- perature increasing from 300 to 642 K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6 meV. The temperature dependence of the peak energy well follows the band- gap shrinkage of bulk semiconductor.

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