Synthesis of one-dimensional GaN nanorods by Tb intermediate layer with different thicknesses

作     者：Jin-Hua Chen Ping Shi Yu-Lan Li Xue-Lei Sun Cheng-Shan Xue Ji-Yuan Guo 无

作者机构：Department of Mechanical and Electrical EngineeringZhenjiang Vocational Technical College College of Physics and ElectronicsShandong Normal University College of Mathematics and PhysicsJiangsu University of Science and Technology 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2016年第35卷第12期

页      面：937-939页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 0806[工学-冶金工程] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0702[理学-物理学] 080201[工学-机械制造及其自动化] 

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 90301002 and 90201025) 

主　　题：GaN nanorods Tb intermediate layer Single crystal Photoluminescence 

摘      要：GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, transmission electron microscopy （TEM）, high-resolution transmission electron microscopy （HRTEM）, and photo- luminescence （PL） spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthe- sizing GaN nanostructures is achieved.