Toward High Carrier Mobility and Low Contact Resistance:Laser Cleaning of PMMA Residues on Graphene Surfaces

作     者：Yuehui Jia Xin Gong Pei Peng Zidong Wang Zhongzheng Tian Liming Ren Yunyi Fu Han Zhang 

作者机构：Materials Physics LaboratoryState Key Laboratory for Mesoscopic PhysicsSchool of PhysicsPeking University Key Laboratory of Microelectronic Devices and Circuits(MOE)Institute of MicroelectronicsPeking University School of Electronic and Computer EngineeringPeking University Shenzhen Graduate School 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2016年第8卷第4期

页      面：336-346页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：the National Basic Research Program of China(Grant No.2013CBA01604) the National Science and Technology Major Project of China(Grant No.2011ZX02707) 

主　　题：Graphene PMMA residues Laser exposure Carrier mobility Contact resistance 

摘      要：Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device ***,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device *** to eliminate contamination and restore clean surfaces of graphene is still highly *** this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser *** proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying ***,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be *** work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.