Determination of Traps' Density of State in OLEDs from Current-Voltage Analysis

作     者：M.S.Zaini M.A.Mohd Sarjidan W.H.Abd.Majid 

作者机构：Low Dimensional Materials Research CentrePhysics DepartmentUniversity of Malaya 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2016年第33卷第1期

页      面：127-131页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Supported by the Science Fund under Grant No SF019-2013 the Fundamental Research Grant Scheme under Grant No FP033-2013B the Postgraduate Research Fund under Grant No PG107-2015A the University Malaya Research Grant under Grant No RP026B-15AFR 

主　　题：OLEDs Determination of Traps of in from 

摘      要：A simple method to determine the traps＇ density of state （DOS） in organic light-emitting diodes （OLEDs） by manipulating the current-voltage （I-V） characteristic of the devices at room temperature is introduced. In particular, the trap-dependent space-charge limited current formula is simplified to obtain effective density of traps. In this study, poly[（9,9-di-n-octylfluorenyl-2,7-diyl）-alt-（benzo[2,1,3]thiadiazol-4,8-diyl）] （F8BT） and 2- Methoxy-5-（3＇, 7＇-dimethyloctyloxy） benzene-l,4-diacetonitrile （0C1 Clo-PPV） are selected as the OLEDs emissive layer. The trap DOS of F8BT- and OC1Clo-PPV-based OLEDs are calculated in the magnitudes of 1024 m^-3 and 1023 m^-3, respectively. In addition, the results agree with the other conventional method which is used to determine the trap DOS in OLEDs. This calculation technique may serve as a robust and reliable approach to obtain the trap DOS in OLEDs at room temperature.