Growth and Characterization of High-quality LiAlO2 Single Crystal

作     者：Taohua HUANG Shengming ZHOU Hao TENG Hui LIN Jun ZOU Jianhua ZHOU Jun WANG 

作者机构：Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China Graduate School of Chinese Academy of Sciences Beijing 100039 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2008年第24卷第2期

页      面：145-148页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Project of High Technology Research and Development of China(2006AA03A101 and 2006AA03A103) the National Natural Science Foundation of China(60676004) the Science Research Program of Shanghai(05PJ14100 and 06dz11402) 

主　　题：γ-LiAlO2 crystal Czochralski method Chemical etching Transmission spectra 

摘      要：γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high-resolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum （FWHM） of 17.7-22.6 arcsec and etch pits density of （0.3- 2.2）×10^4 cm^-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5μm and becomes completely absorbing around 6.7μm wavelength, The optical absorption edge in near UV region is about 191 nm.