Preparation of Lead-based Perovskite Structure Ferroelectric Thin Films by Sol-Gel Method and the Properties of the Films

作     者：Meidong, L. Enpei, H. Peiying, W. Yunhua, R. Yike, Z. Churong, L. 

作者机构：Huazhong Univ of Science and Technology Wuhan China 

出 版 物：《High Technology Letters》 (高技术通讯（英文版）)

年 卷 期：1995年第1卷第1期

页      面：95-101页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the High Technology Research and Development Programme of China 

主　　题：Sol-Gel Ferroelectric Pyroelectric Thin film High orientation Epitaxial growth 

摘      要：Polycrystalline PZT,PLT and PbTiO ferroelectric thin films,highly oriented PbTiOferroelectric thin films and epitaxial growth PZT,PLT ferroelectric thin films with per-ovskite-type structure were prepared by the sol-gel *** properties of theceramic thin films were confirmed by P-E hysteresis *** pyroelectric and opticalproperties were also measured.