Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE
Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE作者机构：Department of Electric Engineering Doshisha University 1-3 Miyakodani Tatara Kyotanabe Kyoto 610-0321 Japan Department of Electric Engineering Doshisha University 1-3 Miyakodani Tatara Kyotanabe Kyoto 610-0321 Japan Electronic Materials Division Electronics Section Showa Denko K.K. 1505 Shimokagemori Chichibu Saitama 369-1871 Japan Electronic Materials Division Electronics Section Showa Denko K.K. 1505 Shimokagemori Chichibu Saitama 369-1871 Japan Department of Electric Engineering Doshisha University 1-3 Miyakodani Tatara Kyotanabe Kyoto 610-0321 Japan Department of Electric Engineering Doshisha University 1-3 Miyakodani Tatara Kyotanabe Kyoto 610-0321 Japan
出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)
年 卷 期：2006年第24卷第Z1期
页 面：1-3页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学]
基 金：the project Hybrid Nanostructured Materials and their Applications at the Research Centre for Advanced Science and Technology (RCAST) of Doshisha University through the 'High-Tech Research Center' Project for Private University
主 题：molecular beam epitaxy superlattices GaN AlGaN built-in electric field stark effect
摘 要：Superlattices with varying GaN well widths (2, 3, 6, 9 nm) and fixed AlGaN barrier (8 nm) with high Al-content (x=0.65) were grown. Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the GaN/AlGaN pairs. The AlGaN barrier XRD peak also shifted with increasing well widths, while the GaN XRD peak was nominally unchanged. Room temperature photoluminescence experiments revealed peak emissions at energies lower than the bulk GaN energy gap. The large red shift with respect to the bulk gap is attributed to significant Stark effect for wide multiple quantum wells.
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