Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

作     者：Ngoc Huynh Van Jae-Hyun Lee Dongmok Whang Dae Joon Kang 

作者机构：Department of Physics Institute of Basic SciencesSungkyunkwan University School of Advanced Materials Science and Engineering SKKU Advanced Institute of Nanotechnology Sungkyunkwan University 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2015年第7卷第1期

页      面：35-41页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0817[工学-化学工程与技术] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by Center for BioNano Health-Guard funded by the Ministry of Science, ICT & Future Planning (MSIP) of Korea as a Global Frontier Project (HGUARD_2013M3A6B2) 

主　　题：Si nanowires Field effect transistor Ferroelectric memory 

摘      要：A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.