Low-temperature growth of stoichiometric aluminum nitride films prepared by magnetic-filtered cathodic arc ion plating

作     者：Wan-Qi Qiu Zhong-Wu Liu Ke-Song Zhou 

作者机构：School of Materials Science and EngineeringSouth China University of Technology New Materials Research DepartmentGuangzhou Research Institute of Nonferrous Metals 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2016年第35卷第7期

页      面：520-525页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：financially supported by the National Natural Science Foundation of China(Nos.51071070 and 51271079) the Program for New Century Excellent Talents in University(No.NCET-11-0156) the Fundamental Research Funds for the Central Universities,South China University of Technology(No.2012ZZ0015) 

主　　题：A1N film Stoichiometric ratio Binding energy Ion plating Filter 

摘      要：A1N films were prepared on Si（100） and quartz glass substrates with high deposition rate of 30 nm-min-I at the temperature of below 85 ℃ by the magnetic-filtered cathodic arc ion plating （FCAIP） method. The as-deposited A1N films show very smooth surface and almost no macrodroplets. The films are in amorphous state, and the formation of A1N is confirmed by Nls and A12p X-ray photoelectron spectroscopy （XPS）. The XPS depth profile analysis shows that oxygen is mainly absorbed on the A1N surface. The A1N film has A1 and N concentrations close to the stoichiometric ratio with a small amount of A1203. The prepared A1N films are highly transparent over the wave- length range of 210-990 nm. The optical transmission spectrum reveals the bandgap of 6.1 eV. The present technique provides a good approach to prepare large-scale A1N films with controlled structure and good optical properties at low temperature.