Fabrication of iridium oxide neural electrodes at the wafer level

作     者：ZHANG He PEI WeiHua ZHAO ShanShan YANG XiaoWei LIU RuiCong LIU YuanYuan WU Xian GUO DongMei GUI Qiang GUO XuHong XING Xiao WANG YiJun CHEN HongDa 无

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2016年第59卷第9期

页      面：1399-1406页

核心收录：

学科分类：0810[工学-信息与通信工程] 081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61335010,61275145,61275200&61275145) the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2013AA032204) the Brain Vanguard Technology Crossover Cooperation Projects of Chinese Academy of Sciences(GrantNo.KJZD-EW-L11-01) the Recruitment Program for Young Professionals 

主　　题：制备方法 氧化铱 金电极 神经 晶片 微制造工艺 电化学性质 机械稳定性 

摘      要：Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kW at 1 kH z, high safe charge storage capacity of 3.2 m C/cm^2, and good impedance consistency of less than 25% fluctuation.