Strain-Sensitive Current-Voltage Characteristics of ZnSe Nanowire in Metal-Semiconductor-Metal Nanostructure

作     者：TAN Yu WANG Yan-Guo 谭玉;王岩国

作者机构：Science CollegeHunan Agricultural UniversityChangsha 410128 Beijing National Laboratory of Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesP.O.Box 603Beijing 100190 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第11期

页      面：175-179页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11274365 the Young Scholar Program of Hunan Agricultural University under Grant No 12QN05 

主　　题：transport barrier structure 

摘      要：Experimental investigation of electrical transport properties is carried out by in situ transmission electron microscopy(TEM)to explore the effect of local strain in ZnSe nanowires(NWs)on improvement of electron transport of Au-ZnSe NW-Au(M-S-M)*** results show that the threshold voltage due to the Schottky barrier at the metal-semiconductor NW(M-S)nanocontact is found to decrease significantly when the ZnSe NW bends at the Au-ZnSe junction by the movable probe which can apply longitudinal compression,leading to current-voltage(I–V)characteristics of the M-S-M nanostructure being transformed from a nearly symmetrical to an asymmetrical *** of the I–V characteristic can be ascribed to significant depression of the Schottky barrier at the M-S nanocontact due to the band gap being narrowed by highly localized *** a result,the I–V characteristics of the M-S-M nanostructure are strain-sensitive and can be modified by local strain intentionally produced in the semiconductor *** modifiable I–V characteristics of M-S-M nanostructure confirm that the strain can be used for improvement of transport property of the semiconductor NW-based nanoelectronics with the M-S-M nanostructure.