A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing

作     者：LIU Yan WANG Hong-Juan YAN Jing HAN Gen-Quan 刘艳;王洪娟;颜静;韩根全

作者机构：Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of ChinaCollege of Optoelectronic EngineeringChongqing UniversityChongqing 400044 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第8期

页      面：209-211页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the Fundamental Research Funds for the Central Universities under Grant No 10611201312015 

主　　题：channel Tunnel realization 

摘      要：We report the demonstration of an n-channel lateral Si tunnel field-effect transistor(TFET)with a single crystalline Ge source fabricated using the gate-last *** p Ge source was in situ doped and grown at 320℃.An abrupt interface between Ge source and Si channel with type-II band alignment and a steep source doping profile(~1.5 nm/decade)formed the tunneling *** allows the realization of a TFET with a steep subthreshold swing of 49 mV/decade at room temperature and an ION/IOFF ratio of 107.