Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

作     者：WU ChaoMin1, SHANG JingZhi1, ZHANG BaoPing1,2, ZHANG JiangYong1,3, YU JinZhong1,3 & WANG QiMing1,3 1 Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China 2 Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen 361005, China 3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 

出 版 物：《中国科学:技术科学》 (Scientia Sinica(Technologica))

年 卷 期：2010年第2期

页      面：203-203页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Hi-Tech Research and Development Program of China (“863” Project) (Grant No. 2006AA03Z409) 

主　　题：MOCVD DBR high-reflectivity nitride 

摘      要：We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophoto- meter. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.