H_(2)-Assistance One-Step Growth of Si Nanowires and Their Growth Mechanism
作者机构：Shenzhen Key Laboratory of Laser EngineeringCollege of Electronic Science and TechnologyShenzhen UniversityShenzhen 518060 College of Materials and MetallurgyWuhan University of Science and TechnologyWuhan 430081
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2011年第28卷第10期
页 面：173-175页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Supported by the China Postdoctoral Fund under Grant No.20100470902 the Shenzhen Natural Science Foundation of China Under Grant No.JC200903120019A
主 题：nanowires preparing hundreds
摘 要：Large-scale nanowires are grown on Si wafers by the catalyst-free one-step thermal reaction method in Ar/H_(2) mixture atmosphere at 1000°*** x−ray diffraction and energy dispersive x-ray spectroscopy results reveal that the final nanowires are of silicon *** field emission scanning electron microscopy shows that these self-organized Si nanowires(SiNWs)possess curly crowns with diameters varying from 10 to 300 nm and lengths of up to several hundreds of *** transmission electron microscopy indicates that the nanowires are pure Si with amorphous *** the measurement results show that no silicon oxide is generated in our *** growth mechanism is proposed *** oxide is reduced into Si nanoparticles under the Ar/H_(2) mixture,which is the main reason for the formation of such *** experiments offer a method of preparing Si nanostructures by simply reducing silicon oxide at high temperature.
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