High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers

作     者：徐遵图 杨国文 张敬明 马骁宇 徐俊英 沈光地 陈良惠 

作者机构：中科院半导体所 北京 100083 北京工业大学 北京市光电子技术实验室 北京 100022 

出 版 物：《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期：2000年第21卷第5期

页      面：417-420页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project Supported by High Technology Research &Development Program of China ( Contract No.863 -3 0 7-1 3 -3 ) 

主　　题：quantum well laser high efficiency Al\|free 

摘      要：High efficiency Al\|free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95% and a low internal loss of 1\^8 cm\+\{-1\}. Low threshold current density of 190A/cm\+2 and high slope efficiency of 1\^06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210℃ is also obtained by replacing the GaAs barrier with high\|bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively.