Structural and Optical Properties of GaAs_(0.5)Sb_(0.5) and In_(0.5)Ga_(0.5)As_(0.5)Sb_(0.5):ab initio Calculations for Pure and Doped Materials

作     者：Mazin SH.Othman Khudheir A.Mishjil Nadir F.Habubi 

作者机构：Department of General ScienceFaculty of EducationSoran UniversitySoran-ErbilIraq Department of PhysicsCollege of EducationAl-Mustansiriyah UniversityIraq 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第3期

页      面：193-196页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Supported by Gazi University Research Project under Project No 05/2008/42 

主　　题：alloys quaternary ternary 

摘      要：We perform a first-principles study to evaluate the structural,electronic and optical properties of GaAs_(x)Sb_(1-x) ternary and In_(y)Ga_(1-y)As_(x)Sb_(1-x) quaternary semiconductor alloys up to x=0.5,y=*** employ the Perdew-Burke-Ernzerhof form of the generalized gradient approximation(GGA)within the framework of density functional theory(DFT)by using a simulation *** are carried out in different *** these alloys,lattice parameters and optical band gap energy are *** optical band gaps varywith increasing and decreasing As and In concentrations,*** optical conductivity,absorption and the real part of the dielectric function ε1(ω) are *** results agree well with the theoretical and experimental data available in the literature.