Optoelectronic Response of GeZn_(2)O_(4) through the Modified Becke-Johnson Potential

作     者：Iftikhar Ahmad B.Amin M.Maqbool S.Muhammad G.Murtaza S.Ali N.A.Noor 

作者机构：Department of PhysicsUniversity of MalakandPakistan Materials Modeling LabDepartment of PhysicsHazara University21300Pakistan Department of Physics and AstronomyBall State UniversityIndiana47306-0505USA Department of PhysicsIslamia College UniversityPeshawarPakistan Department of PhysicsUniversity of the PunjabQuaid-e-Azam Campus54590Pakistan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第9期

页      面：142-146页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

主　　题：wave. dielectric approximation 

摘      要：A first-principles technique capable of describing the nearly excited states of semiconductors and insulators,namely the modified Becke–Johnson(mBJ)potential approximation,is used to investigate the electronic band structure and optical properties of spinel oxides:GeZn_(2)O_(4).The predicted band gaps using the mBJ approximation are significantly more accurate than the proposed previous theoretical work using the common LDA and *** gap dependent optical parameters,like the dielectric constant,index of refraction,reflectivity and optical conductivity are calculated and *** results from the dielectric constant shows that the numerical value of the static dielectric,after dropping constantly,becomes less than zero and the material exhibits metallic *** refractive index also drops below unity for photons higher than 18 eV,which indicates that the velocities of incident photons are greater than the velocity of ***,these phenomena can be explained by the fact that a signal must be transmitted as a wave packet rather than a monochromatic *** comprehensive theoretical study of the optoelectronic properties predicts that these materials can effectively be used in optical devices.