咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Removing Impurity of cBN Cryst... 收藏

Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature

删除cBN晶体的杂质准备在高压和高温

作     者:JI Xiao-Rui YANG Xiao-Hong 吉晓瑞;杨晓红

作者机构:Department of Preparatory CourseShenyang Institute of EngineeringShenyang 110136 

出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期:2012年第29卷第3期

页      面:224-226页

核心收录:

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0802[工学-机械工程] 0704[理学-天文学] 080201[工学-机械制造及其自动化] 

主  题:transparent removing Crystal 

摘      要:The black cubic boron nitride(cBN)single crystal is synthesized by using hBN-LiH and hBN-Li_(3)N-B as the raw materials at high temperature and high pressure(HTHP).The colors of the cBN crystal synthesized in an hBN-Li_(3)N-B system vary from transparent yellow,half-transparent and then opaque black with the increasing B content in the raw *** is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li_(3)N-B system but can not be found in the hBN-LiH *** the Raman spectrum,we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B *** above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分