Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05))O_3 thin membranes

作     者：左正笏 詹清峰 陈斌 杨华礼 刘宜伟 刘鲁萍 谢亚丽 李润伟 

作者机构：Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Material Technology and EngineeringChinese Academy of Sciences Zhejiang Province Key Laboratory of Magnetic Materials and Application TechnologyNingbo Institute of Material Technology and Engineering Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第8期

页      面：388-392页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11374312,51401230,and 51522105) the Fund for Ningbo Municipal Science and Technology Innovation Team,China(Grant No.2015B11001) 

主　　题：antiferroelectric films freestanding energy storage 

摘      要：Free-standing antiferroelectric Pb（Zr0.95Ti0.05O3（PZT（95/5）） thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT（95/5） film possesses an α-axis preferred *** critical electric field for the 300-nm-thick free-standing PZT（95/5） film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT（95/5） *** energy storage density and energy efficiency of the substrate-clamped PZT（95/5） film are 6.49 J/cm^3 and 54.5%,*** contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT（95/5） film are enhanced up to 17.45 J/cm^3 and 67.9%,respectively.