Characterization of a ZnO Epilayer Grown on Sapphire by using Rutherford Backscattering/Channeling and X-Ray Diffraction

作     者：DING Bin-Feng 丁斌峰

作者机构：Department of Physics and Electronic InformationLangfang Teachers CollegeLangfang 065000 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2012年第29卷第3期

页      面：239-242页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50802041 and 50872050 the National Basic Research Program of China under Grant No 2010CB831524 the 2009 Self-Raised Funds Project of Langfang Science and Technology Bureau under Grant No 2009013056 the 2011 Key Project of the Langfang Teachers College under Grant No LSZZ201101 

主　　题：sapphire surface layer 

摘      要：A ZnO layer with rather good crystalline quality(Xmin=9.4%)is grown on a sapphire substrate by plasma enhanced chemical vapor deposition(PECVD).Rutherford backscattering(RBS)/channeling and high-resolution x-ray diffraction(XRD)are used to characterize the elastic strain in the ZnO *** tetragonal distortion is positive and depth *** is highest near the interface and decreases towards the sample *** combining the results of RBS and XRD,the average elastic strains in the parallel and the perpendicular directions can be calculated to be 0.50%and-0.17%,respectively.