Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect

作     者：周建华 高明辉 彭树根 邹世昌 

作者机构：Grace Semiconductor Manufacturing Corporation Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Graduate University of the Chinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第2期

页      面：33-37页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：partially depleted SOI-CMOS floating body effect hot-carriers kink-effect gate oxide tunneling 

摘      要：As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.