Leakage Current and Photovoltaic Properties in a Bi_(2)Fe_(4)O_(9)/Si Heterostructure
作者机构：Shaanxi Key Laboratory of Condensed Matter Structures and PropertiesSchool of ScienceNorthwestern Polytechnical UniversityXi'an 710072
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2011年第28卷第8期
页 面：258-261页
核心收录：
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
基 金：by the National Natural Science Foundation of China under Grant Nos 61078057 and 50702046 NPU Foundation for Fundamental Research under Grant Nos NPU-FFR-JC200821 and JC201048 and NWPU Aoxiang Star Project
主 题：heterostructure initially film
摘 要：A heterostructure composed of a Bi2Fe4O9 film and an n−type Si substrate is *** characteristics of leakage current density versus electric field are investigated and the leakage current density is about 6×10^(−6) A/cm^(2) at an electric field of 200 kV/cm at 300 K.A strong photovoltaic effect is observed when the heterostructure is exposed to a laser pulse with a wavelength of 532 nm and a power of 6 mW/mm^(2).It is found that the peak photovoltages initially increase with decreasing temperature,followed by a decrease at T210 *** results reveal that the heterostructure is a promising candidate for photovoltaic devices that are compatible with Si integrated circuits.
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