A High Performance In_(0.7)Ga_(0.3)As MOSFET with an InP Barrier Layer for Radio-Frequency Application

作     者：CHANG Hu-Dong LIU Gui-Ming SUN Bing ZHAO Wei WANG Wen-Xin LIU Hong-Gang 常虎东;刘桂明;孙兵;赵威;王文新;刘洪刚

作者机构：Microwave Device and IC DepartmentInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029 Institute of PhysicsChinese Academy of SciencesBeijing 100190 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第3期

页      面：143-145页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CBA00605,2010CB327501 the National Science&Technology Major Project under Grant No 2011ZX02708-003 One Hundred Talents Program of Chinese Academy of Sciences,and the Scientific Research Foundation for the Returned Overseas Chinese Scholars,the Ministry of Education of China 

主　　题：channel InP dielectric 

摘      要：We demonstrate a high performance implant-free n-type In_(0.7)Ga_(0.3)As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al_(2)O_(3) as gate *** maximum effective channel mobility is 1862 cm^(2)/V·s extracted by the split C–V *** with 0.8μm gate length exhibit a peak extrinsic transconductance of 85 mS/mm and a drive current of more than 200 mA/mm.A short-circuit current gain cutoff frequency f_(T) of 24.5 GHz and a maximum oscillation frequency f_(max) of 54 GHz are achieved for the 0.8μm gate-length *** research is helpful to obtain higher performance In_(0.7)Ga_(0.3)As MOSFETs for radio-frequency applications.