A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition
作者机构：Key Laboratory for Magnetism and Magnetic Materials of the Ministry of EducationPhysical Science and Technology SchoolLanzhou UniversityLanzhou 730000
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2011年第28卷第2期
页 面：216-219页
核心收录：
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：Supported by the National Natural Science Foundation of China under Grant No 50802037 the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041
主 题：deposition transformation crystalline
摘 要：Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was *** phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this *** to this model,the phase transition is due to a distinct difference in the probability distribution of the H radicals,which seems to be dependent upon Tfil.
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