Bipolar Resistive Switching Characteristics of TiN/HfO_(x)/ITO Devices for Resistive Random Access Memory Applications

作     者：TAN Ting-Ting CHEN Xi GUO Ting-Ting LIU Zheng-Tang 谭婷婷;陈曦;郭婷婷;刘正堂

作者机构：State Key Lab of Solidification ProcessingSchool of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi'an 710072 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第10期

页      面：152-155页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 51202196 the Northwestern Polytechnical University(NPU)Foundation for Fundamental Research(No JC201111) the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)(No 58-TZ-2011) the 111 Project(No B08040) 

主　　题：structure conduction amorphous 

摘      要：Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device *** HfOx films with different oxygen contents are deposited by rf magnetron sputtering under different O_(2) flow *** films are amorphous,and the stoichiometric of the film is improved by increasing the O_(2) flow ***-voltage characteristics of the TiN/HfOx/ITO device are investigated with 1 mA *** bipolar resistive switching behavior is observed for the TiN/HfOx/ITO structure,and the resistive switching mechanism of the TiN/HfOx/ITO structure is explained by trap-controlled space charge limit current conduction.