Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence
成长堆叠故障引起的氧化锌纳米棒态的空间分辨阴极发光作者机构:State Key Laboratory of Solidification ProcessingSchool of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an 710072 Institut fur Quantenmaterie/Gruppe HalbleiterphysikUniversitat Ulm89069 UlmGermany Institut fur Experimentelle PhysikOtto-von-Guericke-Universitat Magdeburg39106 MagdeburgGermany
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2012年第29卷第7期
页 面:261-264页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0704[理学-天文学]
基 金:Supported by the China Scholarship Council(CSC)under No 20073020 the National Natural Science Foundations of China(Nos 50902113,50902114) the National Basic Research Program of China(No 2011CB610406) the 111 Project of China(No B08040)
主 题:vapour Spatial ultraviolet
摘 要:Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a *** use high resolution photoiuminescence spectroscopy to gain the optical properties of these nanorods in large *** as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300μeV,and the ratio of ultraviolet/yellow luminescence larger than *** spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid grovth *** bottom of the nanorod has a 3.31-eV luminescence,which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.