Principle and Analysis of Novel Gate-Induced Noise in Pixel MOSFET of CMOS Imagers

作     者：金湘亮 陈杰 仇玉林 Jin Xiangliang;Chen Jie;Qiu Yulin

作者机构：中国科学院微电子中心北京100029 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2003年第24卷第9期

页      面：921-926页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：gate-induced noise pixel MOSFET improved photodiode APS CMOS imagers 

摘      要：A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are *** gate-induced noise of the MOSFET is more notable in the strong reversion region than that in the subthreshold region when the applied gate voltage is ***,the applied gate voltage being up to 3V,the gate-induced noise is more notable with the ω/ω T increasing when the MOSFET operates in the subthreshold region than that in the strong reversion *** the photocurrent I D and the root mean square value of the gated-induced noise,current i 2 d presents the relation of i 2 d∝I D in the saturation region of the strong reversion and approximately i 2 d∝I D in the subthreshold region.A deta iled and rigorous study of the gate-induced noise in the reset MOSFET for the p hotodiode APS and improved photodiode APS are *** improvement of logari thmic response APS is analyzed and the simulation results show that the gate-in duced noise can be reduced.