Large Active Area AlGaN Solar-Blind Schottky Avalanche Photodiodes with High Multiplication Gain

作     者：LI Jian-Fei HUANG Ze-Qiang ZHANG Wen-Le JIANG Hao 李剑飞;黄泽强;张文乐;江灏

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou 510275 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2013年第30卷第3期

页      面：176-178页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Basic Research Program of China(No 2012CB619302) National Natural Science Foundation of China under Grant No 60876040 

主　　题：Schottky AlGaN sapphire 

摘      要：We report the fabrication and performance of solar-blind AlGaN Schottky avalanche photodiodes grown on sapphire *** increased active donor density is found near the surface,leading to an enhanced electric field adjacent to the Schottky *** gain over 2000 has been achieved in the fabricated devices with a mesa diameter of 200μ*** measured dark I–V curves at different temperatures show strong temperature dependence,suggesting that the gain mechanism in our devices is primarily due to impact *** responsivity of 66.3 mA/W is obtained at 260 nm and at zero bias,corresponding to an external quantum efficiency of 31.6%.